공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-12-11
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
STMicroelectronicsSTD6NK50ZT4
N-CHANNEL 500V - 0.93͐2;6; - 5.6A DPAK Zener-Protected SuperMESH™ MOSFET
STMicroelectronicsSTD5NK50ZT4
N-channel 500 V, 1.22 Ohm typ., 4.4 A Zener-protected SuperMESH Power MOSFET in DPAK package
설명
유통업체에서 제공한 Vishay IRFR430ATRPBF에 대한 설명입니다.
IRFR430A Series N-Channel 500 V 1.7 Ohm 110 W Power Mosfet - DPAK (TO-252)
IRFR430ATRPBF N-CHANNEL MOSFET TRANSISTOR, 5 A, 500 V, 3-PIN TO-252
Power MOSFET Power Field-Effect Transistor, 5A I(D), 500V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Reel Quantity:2000; Transistor Type:MOSFET ;RoHS Compliant: Yes
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
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- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
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- VISHAY ELECTRONIC
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기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)5 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance1.7 Ω
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance490 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation110 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation110 W
Rds On Max1.7 Ω
Resistance1.7 Ω
Rise Time27 ns
Schedule B8541290080
Threshold Voltage4.5 V
Turn-Off Delay Time17 ns
Turn-On Delay Time8.7 ns
Dimensions
Height2.507 mm
Length6.73 mm
Width6.22 mm