유통업체에서 제공한 onsemi FQD6N40CTM에 대한 설명입니다.
N-Channel Power MOSFET, QFET®, 400 V, 4.5 A, 1.0 Ω, DPAK
Power MOSFET, N Channel, 400 V, 4.5 A, 0.83 ohm, TO-252 (DPAK), Surface Mount
Power Field-Effect Transistor, 4.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
2.5W(Ta)£¬48W(Tc) 30V 4V@ 250¦ÌA 20nC@ 10 V 1individualNChannel 400V 1¦¸@ 2.25A,10V 4.5A 625pF@25V TO-252AA SMD mount 2.52mm(height)
MOSFET, N CH, 400V, 4.5A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:400V; On Resistance Rds(on):0.83ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:48W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.