가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | FQD17N08LTF | 1,207 | 842 | |||||||||
| Rochester Electronics | FQD17N08LTF | 1,207 | 11h | |||||||||
| Win Source | WS-FQD17N08LTF | 20 | 110 | 12h | ||||||||
| Worldway Electronics | FQD17N08LTF | 12,158 | 7 | Bulk | 11h | |||||||
| Klychip | FQD17N08LTF | 문의하기 | 1 | >1wk |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-09-14
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-03-11
LTD Date2008-09-11
관련 부품
Diodes Inc.DMP6180SK3-13
P-Channel 60 V 110 mO Surface Mount Enhancement Mode Mosfet -TO-252-3 (DPAK)
onsemiHUF76407D3S
11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | MOSFET N-CH 60V 12A DPAK
설명
유통업체에서 제공한 onsemi FQD17N08LTF에 대한 설명입니다.
MOSFET N-CH 80V 12.9A DPAK
Power Field-Effect Transistor, 12.9A I(D), 80V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFETs 80V N-Channel QFET Logic Level
N-CHANNEL POWER MOSFET
MISCELLANEOUS MOSFETS;
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)12.9 A
Current Rating12.9 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance115 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Fall Time75 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance520 pF
Max Operating Temperature150 °C
Max Power Dissipation40 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max100 mΩ
Rise Time290 ns
Turn-Off Delay Time20 ns
Voltage Rating (DC)80 V