공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1998-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
관련 부품
InfineonIRFR3910TRPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.115Ohm;ID 16A;D-Pak (TO-252AA);PD 79W
InfineonIRFR3910TRLPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.115Ohm;ID 16A;D-Pak (TO-252AA);PD 79W
InfineonIRLR3410TRPBF
Power MOSFET, N Channel, 100 V, 17 A, 105 Milliohms, TO-252AA (DPAK), 3 Pins, Surface Mount
onsemiHUF76619D3S
18A, 100V, 0.087 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | MOSFET N-CH 100V 18A DPAK
설명
유통업체에서 제공한 Infineon IRFR3910PBF에 대한 설명입니다.
Transistor MOSFET N Channel 100 Volt 16 Amp 3-Pin 2+ Tab Dpak
Single N-Channel 100 V 0.115 Ohm 44 nC HEXFET® Power Mosfet - TO-252AA
SMD Multilayer Ceramic Capacitor, 1000 pF, 50 V, 0603 [1608 Metric],10%, X7R, GRT Series
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:16A; On Resistance, Rds(on):115mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D-PAK ;RoHS Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
MOSFET, N, 100V, 15A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:100V; On Resistance Rds(on):110mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:52W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:16A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:2.4°C/W; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:52W; Power Dissipation Pd:52W; Pulse Current Idm:60A; SMD Marking:IRFR3910; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)16 A
Current Rating16 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance115 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance640 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation52 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance115 mΩ
Package Quantity3000
Power Dissipation52 W
Rds On Max115 mΩ
Recovery Time190 ns
Resistance115 mΩ
Rise Time27 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time37 ns
Turn-On Delay Time6.4 ns
Voltage Rating (DC)100 V
Dimensions
Height2.52 mm
Length6.7056 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책