Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on) and FOM (figure of merit).
MOSFET, N CH, 13A, 100V, PG-TO252-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):59mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; Current Id Max:13A; Power Dissipation Pd:31W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V