onsemi FQB9N50CTM

N-Channel Power MOSFET, QFET®, 500 V, 9 A, 800 mΩ, D2PAK
Obsolete
제조업체 페이지데이터시트

가격 및 재고

모든 가격 할인 보기
DistributorSKUMinPkg
FarnellFQB9N50CTM01
1d
Win SourceWS-FQB9N50CTM60070
5h
Microchip USAFQB9N50CTM315100Tray
20h
Worldway ElectronicsFQB9N50CTM13,4277Tape & Reel
4h
SHENGYU ELECTRONICSFQB9N50CTM16,0831
2d

데이터시트 및 문서

onsemi FQB9N50CTM에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet8 페이지12년 전
Datasheet0 페이지0년 전

onsemi

element14 APAC

Fairchild Semiconductor

Farnell

공급망

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-10-02
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

관련 부품

VishaySIHB6N65E-GE3
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Trans MOSFET P-CH 200V 7.3A 3-Pin(2+Tab) D2PAK T/R
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STMicroelectronicsSTB14NM50N
N-channel 500 V, 0.28 Ohm typ., 12 A MDmesh II Power MOSFET in a D2PAK package
세부 사항
InfineonIPB60R299CPATMA1
Trans MOSFET N-CH 600V 11A Automotive 3-Pin(2+Tab) D2PAK T/R
세부 사항
InfineonSPB16N50C3
Mosfet Transistor, N Channel, 16 A, 560 V, 0.25 Ohm, 10 V, 3 V Rohs Compliant: Yes
세부 사항

설명

유통업체에서 제공한 onsemi FQB9N50CTM에 대한 설명입니다.

N-Channel Power MOSFET, QFET®, 500 V, 9 A, 800 mΩ, D2PAK
onsemi
N-Channel 500 V 0.8 Ohm Surface Mount Mosfet - D2PAK-3
Future Electronics
MOSFET, N CH, 500V, 9A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.65ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:135W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
Farnell
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Fairchild Semiconductor

이미지

RS
Newark
Farnell
Future Electronics

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