공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-11-19
Lifecycle StatusObsolete (Last Updated: 3 weeks ago)
LTB Date2022-10-01
LTD Date2023-03-31
관련 부품
STMicroelectronicsSTB11N52K3
N-channel 525 V, 0.41 Ohm, 10 A SuperMESH3(TM) Power MOSFET in D2PAK package
VishaySIHB6N65E-GE3
Single N-Channel 700 V 0.6 O 48 nC Surface Mount Power Mosfet - TO-263 (D2PAK)
InfineonSPB18P06PGATMA1
MOSFET, P-CH, 60V, 18.7A, TO-263; Transistor Polarity:P Channel; Continuous Drai
설명
유통업체에서 제공한 onsemi FQB7P20TM-F085에 대한 설명입니다.
Trans MOSFET P-CH 200V 7.3A 3-Pin(2+Tab) D2PAK T/R
MOSFET, P CHANNEL, -200V, 0.54OHM, -7.3A, TO-263-3, FULL REEL; Transistor Polarity: P Channel; Continuous Drain Current Id: -7.3A; Drain Source Voltage Vds: -200V; On Resistance Rds(on): 0.54ohm; Rds(on) Te
Mosfet, P Channel, -200V, 0.54Ohm, -7.3A, To-263-3, Full Reel; Transistor, Polaridad:Canal P; Intensidad Drenador Continua Id:-7.3A; Tensión Drenaje-Fuente Vds:-200V; Resistencia De Activación Rds(On):0.54Ohm; Tensión Umbral Vgs:-3V |Onsemi FQB7P20TM_F085
These P-Channel enchancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Technology.This advanced Technology has been especially tailored to minimize on- state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and communication mode. These devices are well suited for high efficiency switching DC/DC converters.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-263
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)7.3 A
Drain to Source Resistance690 mΩ
Drain to Source Voltage (Vdss)-200 V
Fall Time42 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance770 pF
Max Operating Temperature150 °C
Max Power Dissipation90 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
Rds On Max690 mΩ
Rise Time110 ns
Schedule B8541290080
Threshold Voltage-3 V
Turn-Off Delay Time30 ns
Turn-On Delay Time15 ns