대체 부품
Price @ 1000
$ 1.705
Stock
476,651
197,323
Authorized Distributors
1
3
Mount
Surface Mount
Surface Mount
Case/Package
TO-263
D2PAK
Drain to Source Voltage (Vdss)
600 V
600 V
Continuous Drain Current (ID)
11 A
11 A
Threshold Voltage
-
-
Rds On Max
-
299 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
96 W
96 W
Input Capacitance
-
1.1 nF
공급망
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-11-22
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
관련 부품
InfineonIPB60R380C6ATMA1
INFINEON - IPB60R380C6ATMA1 - MOSFET Transistor, N Channel, 10.6 A, 600 V, 0.34 ohm, 10 V, 3 V
STMicroelectronicsSTB14NM50N
N-channel 500 V, 0.28 Ohm typ., 12 A MDmesh II Power MOSFET in a D2PAK package
VishaySIHB6N65E-GE3
Single N-Channel 700 V 0.6 O 48 nC Surface Mount Power Mosfet - TO-263 (D2PAK)
설명
유통업체에서 제공한 Infineon IPB60R299CPATMA1에 대한 설명입니다.
Trans MOSFET N-CH 600V 11A Automotive 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
MOSFET, N, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:650V; On Resistance Rds(on):299mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:96W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:11A; Package / Case:TO-263; Power Dissipation Pd:96W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-263
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)11 A
Drain to Source Resistance299 mΩ
Drain to Source Voltage (Vdss)600 V
Gate to Source Voltage (Vgs)20 V
Max Dual Supply Voltage600 V
Max Operating Temperature150 °C
Max Power Dissipation96 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance299 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation96 W
Rise Time5 ns
Schedule B8541290080
Turn-Off Delay Time40 ns
Turn-On Delay Time10 ns
규정 준수
환경 분류
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeContains Lead
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책