유통업체에서 제공한 onsemi FQB6N80TM에 대한 설명입니다.
N-Channel Power MOSFET, QFET®, 800 V, 5.8 A, 1.95 Ω, D2PAK
TRANSISTOR, N-CHANNEL, QFET MOSFET, 800V, 5.8A, 1.95 MOHM AT VGS 10V, D2PAK
N-Channel 800 V 1.95 Ohm Surface Mount Mosfet - D2PAK-3
Trans MOSFET N-CH 800V 5.8A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 5.8A I(D), 800V, 1.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH, 800V, 5.8A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.8A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 158W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.