관련 부품
STMicroelectronicsSTB7NK80ZT4
N-channel 800 V, 1.5 Ohm typ., 5.2 A Zener-protected SuperMESH Power MOSFET in a D2PAK package
STMicroelectronicsSTB6NK90ZT4
N-channel 900 V, 1.56 Ohm, 5.8 A D2PAK Zener-protected SuperMESH(TM) Power MOSFET
VishayIRFBC40ASTRLPBF
125W(Tc) 30V 4V@ 250¦ÌA 42nC@ 10 V 1N 600V 1.2¦¸@ 3.7A,10V 6.2A 1.036nF@25V D2PAK,TO-263
설명
유통업체에서 제공한 STMicroelectronics STB9NK80Z에 대한 설명입니다.
Mosfet, Aec-Q101, N-Ch, 800V, 5.2A, 125W Rohs Compliant: Yes |Stmicroelectronics STB9NK80Z
Automotive-grade N-channel 800 V, 1.5 Ohm typ., 5.2 A Zener-protected SuperMESH(TM) Power MOSFET in D2PAK package
125W(Tc) 30V 4.5V@ 100¦ÌA 40nC@ 10 V 1N 800V 1.8¦¸@ 2.6A,10V 5.2A 1.138nF@25V D2PAK
Trans MOSFET N-CH 800V 5.2A Automotive 3-Pin(2+Tab) D2PAK T/R
MOSFET, AEC-Q101, N-CH, 800V, 5.2A, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:5.2A; Source Voltage Vds:800V; On
Power Field-Effect Transistor, 5.2A I(D), 800V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, AEC-Q101, N-CH, 800V, 5.2A, 125W; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.2A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 125W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: SuperMESH Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
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- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
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- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)5.2 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance1.8 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.138 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation125 W
Rds On Max1.8 Ω
Rise Time12 ns
Turn-Off Delay Time45 ns
Turn-On Delay Time20 ns
Dimensions
Height4.83 mm