유통업체에서 제공한 onsemi FQB7N60TM에 대한 설명입니다.
N-Channel Power MOSFET, QFET®, 600 V, 7.4 A, 1 Ω, D2PAK
N-Channel 600 V 1 Ohm Surface Mount Mosfet - D2PAK-3
Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
3.13W(Ta)£¬142W(Tc) 30V 5V@ 250¦ÌA 38nC@ 10V 1individualNChannel 600V 1¦¸@ 3.7A,10V 7.4A 1.43nF@25V TO-263 SMD mount 10.67mm*9.65mm*4.83mm
MOSFET, N, SMD, TO-263; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:7.4A; Resistance, Rds On:1ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:D2-PAK; Termination Type:SMD; No. of Pins:2; Power Dissipation:142W; Power Dissipation on 1 Sq. PCB:3.13W; Voltage, Vds Max:600V; Voltage, Vgs th Max:5V
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.