공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-09-27
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
onsemiFJPF13009TU
Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
onsemiFJPF13009H2TU
400V 50W 12A 6@8A5V 4MHz 3V@12A3A NPN +150¡Í@(Tj) TO-220F Bipolar Transistors - BJT ROHS
onsemiFJP13007H2TU
Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
NXP SemiconductorsPHE13009,127
Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
NXP SemiconductorsPHE13009/DG,127
NOW WEEN - PHE13009 - POWER BIPO / Bipolar (BJT) Transistor NPN 400 V 12 A 80 W Through Hole TO-220AB
NXP SemiconductorsBUJ303B,127
NOW WEEN - BUJ303B - POWER BIPOL / Bipolar (BJT) Transistor NPN 400 V 5 A 100 W Through Hole TO-220AB
설명
유통업체에서 제공한 onsemi FJP13009TU에 대한 설명입니다.
FJP13009 Series 400 V CE Breakdown 12 A NPN Power Transistor - TO-220
1mA 400V 100W 12A 6@8A5V 4MHz 3V@12A3A NPN +150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT NPN Sil Transistor
Trans GP BJT NPN 400V 12A 100000mW 3-Pin(3+Tab) TO-220 Tube
High-Voltage Fast-Switching NPN Power Transistor
TRANSISTOR, NPN, 12A 400V TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency Typ ft:4MHz; Power Dissipation Pd:100W; DC Collector Current:12A; DC Current Gain hFE:8; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:3V; Current Ic Continuous a Max:12A; Gain Bandwidth ft Typ:4MHz; Hfe Min:6; Package / Case:TO-220; Power Dissipation Pd:100W; Termination Type:Through Hole; Transistor Type:Switching
The FJP13009 is a 700 V, 12 A NPN silicon epitaxial planar transistor. The FJP13009 is available with multiple hFE bin classes for ease of design use. The FJP13009 is designed for high speed switching applications which utilizes the industry standard TO-220 package offering flexibility in design and excellent power dissipation.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
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- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
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- ON Semi - ON Semiconductor
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- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Collector Base Voltage (VCBO)700 V
Collector Emitter Breakdown Voltage400 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)400 V
Current Rating12 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)9 V
Frequency4 MHz
Gain Bandwidth Product4 MHz
hFE Min6
Max Collector Current12 A
Max Frequency4 MHz
Max Operating Temperature150 °C
Max Power Dissipation100 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation100 W
Schedule B8541290080
Transition Frequency4 MHz
Voltage Rating (DC)400 V
Dimensions
Height16.51 mm
Length10.67 mm
Width4.83 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책