onsemi FJPF13009TU

Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Obsolete

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데이터시트 및 문서

onsemi FJPF13009TU에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet5 페이지21년 전

onsemi

Fairchild Semiconductor

DigiKey

iiiC

공급망

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-05-21
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-02-23
LTD Date2012-08-23

관련 부품

FJP13009 Series 400 V CE Breakdown 12 A NPN Power Transistor - TO-220
Trans GP BJT NPN 400V 8A 40000mW 3-Pin(3+Tab) TO-220F Rail
Bipolar (BJT) Transistor NPN 400V 8A 4MHz 40W Through Hole TO-220F
NXP SemiconductorsPHE13009/DG,127
Trans GP BJT NPN 400V 12A 3-Pin(3+Tab) TO-220AB Rail
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Bipolar (BJT) Transistor NPN 400V 4A 4MHz 75W Through Hole TO-220-3
NXP SemiconductorsBUJ106A,127
Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

설명

유통업체에서 제공한 onsemi FJPF13009TU에 대한 설명입니다.

Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
NPN Silicon Transistor
TRANS NPN 400V 12A TO-220F
TRANS NPN 400V 12A TO220F-3
The FJPF13009 is a 700 V 12 A NPN Silicon Epitaxial Planar Transistor. The FJPF13009 is available with multiple hFE bin classes for ease of design use. The FJPF13009 is designed for high speed switching applications which utilizes the industry standard TO-220F package offering flexibility in design and excellent Power Dissipation.

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