공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.75
Introduction Date2002-04-12
관련 부품
NXP SemiconductorsBUJ303A,127
Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
NXP SemiconductorsBUJ103A,127
Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
설명
유통업체에서 제공한 NXP Semiconductors BUJ303B,127에 대한 설명입니다.
Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 400V 5A 100000mW 3-Pin(3+Tab) TO-220AB Rail
5 A 400 V NPN Si POWER TRANSISTOR TO-220AB
NOW WEEN - BUJ303B - POWER BIPOL
제조업체 별칭
NXP Semiconductors에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. NXP Semiconductors는 다음 이름으로도 알려져 있습니다:
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
기술 사양
Physical
Case/PackageTO-220-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)1.05 kV
Collector Emitter Breakdown Voltage400 V
Collector Emitter Voltage (VCEO)400 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)1.05 kV
hFE Min10.5
Max Collector Current5 A
Max Operating Temperature150 °C
Max Power Dissipation100 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation100 W