onsemi FGA15S125P

Trans IGBT Chip N-CH 1.25KV 30A 3-Pin(3+Tab) TO-3PN Tube
Obsolete

가격 및 재고

데이터시트 및 문서

onsemi FGA15S125P에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet8 페이지12년 전
Datasheet0 페이지0년 전

onsemi

Fairchild Semiconductor

대체 부품

Price @ 1000
$ 2.27
Stock
119,030
49,439
Authorized Distributors
0
3
Mount
Through Hole
Through Hole
Case/Package
-
TO-247
Collector Emitter Breakdown Voltage
1.25 kV
1.2 kV
Max Collector Current
30 A
30 A
Power Dissipation
136 W
-
Collector Emitter Saturation Voltage
2.72 V
2.1 V
Reverse Recovery Time
-
-

공급망

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-10-17
Lifecycle StatusObsolete (Last Updated: 2 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)

관련 부품

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Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(3+Tab) TO-220AB Rail
STMicroelectronicsSTGF3NC120HD
STGF3NC120HD Series 1200 V 7 A Very Fast IGBT with Ultrafast Diode - TO-220FP
STMicroelectronicsSTGP3NC120HD
Trans IGBT Chip N-CH 1200V 14A 75W 3-Pin(3+Tab) TO-220AB Tube
STMicroelectronicsSTGD5NB120SZ-1
IGBT 1200V 10A 75W IPAK / N-CHANNEL 5A -1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH IGBT

설명

유통업체에서 제공한 onsemi FGA15S125P에 대한 설명입니다.

Trans IGBT Chip N-CH 1.25KV 30A 3-Pin(3+Tab) TO-3PN Tube
IGBT, 1250V, 15A, Shorted-anode
Insulated Gate Bipolar Transistor, 30A I(C), 1250V V(BR)CES, N-Channel
RAIL / 1250V 15A FS SA Trench IGBT
1250 V, 15 A Shorted-anode IGBT
INSULATED GATE BIPOLAR TRANSISTO
Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for switching applications. The device can operate in parallel configuration with exceptional avalanche capability . This device is designed for induction heating and microwave oven.

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