onsemi FDS6990A

Dual N-Channel PowerTrench® MOSFET, Logic Level, 30V, 7.5A, 18mΩ

Trans MOSFET N-CH 30V 7.5A 8-Pin SOIC T/R / MOSFET 2N-CH 30V 7.5A 8SOIC

DUAL N-CHANNEL LOGIC LEVEL POWERTRENCH MOSFET Small Signal Field-Effect Transistor, 7.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:7.5A; On Resistance, Rds(on):0.01ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:7.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 25°C:7.5A; Current Id Max:7.5A; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:20A; SMD Marking:FDS6990A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1V