onsemi FDS6900AS

Transistor MOSFET Array Dual N-CH 30V 8.2A/6.9A 8-Pin SOIC T/R

Dual N-Channel PowerTrench® SyncFET™ 30V

008, PLASTIC MOLDED, SOIC-8 PKG, NARROW BODY, DUAL DIE <AZ

MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC

Power Field-Effect Transistor, 8.2A I(D), 30V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

SO8, DUAL NCH, POWER TRENCH SYNCFET

SMALL SIGNAL FIELD-EFFECT TRANSI

MOSFET, DUAL, N, SMD, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:6.9A; Resistance, Rds On:27mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.9V; Case Style:SOIC; Termination Type:SMD; Current, Id Cont N Channel 2:6.9A; Current, Id Cont N Channel 3:8.2A; Current, Idm Pulse N Channel 2:20A; Current, Idm Pulse N Channel 3:30A; No. of Pins:8; Power Dissipation:2W; Resistance, Rds on N Channel 1:0.027ohm; Resistance, Rds on N Channel 2:0.022ohm; Transistors, No. of:1; Voltage, Vds Max:30V

The FDS6900AS is designed to replace two single SO- 8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6900AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.