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Lifecycle StatusEOL (Last Updated: 1 week ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
관련 부품
InfineonIRF8707GTRPBF
N CH POWER MOSFET, HEXFET, 30V, 11A, SO-8; Transistor Polarity:N Channel; Contin
설명
유통업체에서 제공한 onsemi FDS8884에 대한 설명입니다.
onsemi N-Channel Enhancement MOSFET PowerTrench Series Vds=30V 8.5A SOIC Package SMD 8-Pin
N-Channel 30 V 23 mOhm 13 nC Surface Mount PowerTrench Mosfet - SOIC-8
N-Channel PowerTrench® MOSFET 30V, 8.5A, 23mΩ
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
MOSFET, N, SO-8; Transistor Polarity:N; Current Id Max:8.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Power Dissipation:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SO; No. of Pins:8; SVHC:No SVHC (18-Jun-2010); Continuous Drain Current, Id:8.5A; Package / Case:SO-8 (SOIC-8); Termination Type:SMD; Threshold Voltage Vgs Typ:1.7V; Transistor Type:PowerTrench; Typ Voltage Vds:30V; Voltage Vgs Rds on Measurement:10V
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- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight130 mg
Technical
Continuous Drain Current (ID)8.5 A
Current Rating8.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance23 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time21 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance635 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max23 mΩ
Rise Time9 ns
Schedule B8541290080
Threshold Voltage1.7 V
Turn-Off Delay Time42 ns
Turn-On Delay Time5 ns
Voltage Rating (DC)30 V
Dimensions
Height1.75 mm
Length5 mm
Width4 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책