공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-12-08
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2025-01-05
LTD Date2025-07-05
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
관련 부품
설명
유통업체에서 제공한 onsemi FDS6576에 대한 설명입니다.
P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -11A, 14mΩ
Trans MOSFET P-CH 20V 11A 8-Pin SOIC N T/R
MOSFET P-Ch 20V 11A 2.5V-Spec. SOIC8
008, PLASTIC MOLDED, SOIC-8 PKG, NARROW BODY, SMD (S1)<AZ
onsemi PMOS PowerTrench, Vds=20 V, 11 A, SOIC, , 8
Small Signal Field-Effect Transistor, 11A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
SMALL SIGNAL FIELD-EFFECT TRANSI
MOSFET, P, SMD, 8-SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-11A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-830mV; Power Dissipation RoHS Compliant: Yes
This P-Channel 2.5V specified MOSFET is in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight130 mg
Technical
Continuous Drain Current (ID)11 A
Current Rating-11 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance14 mΩ
Drain to Source Voltage (Vdss)-20 V
Dual Supply Voltage-20 V
Element ConfigurationSingle
Fall Time79 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance4.044 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-830 mV
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation1 W
Rds On Max14 mΩ
Resistance14 MΩ
Rise Time17 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-830 mV
Turn-Off Delay Time124 ns
Turn-On Delay Time18 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.75 mm
Length5 mm
Width4 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책