공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1998-11-01
Lifecycle StatusEOL (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
설명
유통업체에서 제공한 onsemi FDS6575에 대한 설명입니다.
TRANSISTOR, P-CHANNEL, 2.5V, SPECIFIED POWERTRENCH MOSFET, 20V, 10A, SOIC8
P-Channel 20 V 13 mOhm Specified PowerTrench Mosfet - SOIC-8
MOSFET, P CH, -20V, -10A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-10A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0085ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-600mV; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)
This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 8V).
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight130 mg
Technical
Continuous Drain Current (ID)10 A
Current Rating-10 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance13 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationSingle
Fall Time78 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance4.951 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-600 mV
Number of Channels1
Number of Elements1
Power Dissipation1.2 W
Rds On Max13 mΩ
Resistance13 MΩ
Rise Time9 ns
Schedule B8541290080
Turn-Off Delay Time196 ns
Turn-On Delay Time16 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.75 mm
Length5 mm
Width4 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책