공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-09-23
Lifecycle StatusObsolete (Last Updated: 3 months ago)
관련 부품
onsemiFDS6898AZ-F085
Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 10mΩ
VishaySI9926CDY-T1-GE3
Transistor: 2xN-MOSFET; unipolar; 20V; 8A; 0.018ohm; 2W; -55+150 deg.C; SMD; SO8
설명
유통업체에서 제공한 Infineon IRF7324TRPBF에 대한 설명입니다.
Transistor MOSFET Array Dual P-CH 20V 9A 8-Pin SOIC T/R
Dual P-Channel 20 V 0.026 Ohm 63 nC HEXFET® Power Mosfet - SOIC-8
Power Field-Effect Transistor, 9A I(D), 20V, 0.018ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-9A; On Resistance, Rds(on):26mohm; Rds(on) Test Voltage, Vgs:12V; Drain Source On Resistance @ 10V:26mohm RoHS Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
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- Infineon Technologies
- INF
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- INFINE
- INFIN
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- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)9 A
Current Rating-9 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationDual
Fall Time190 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance2.94 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
On-State Resistance18 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2 W
Rds On Max18 mΩ
Resistance18 mΩ
Rise Time36 ns
Schedule B8541290080
Threshold Voltage-1 V
Turn-Off Delay Time170 ns
Turn-On Delay Time17 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm