공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-01-16
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
관련 부품
InfineonIRFB7540PBF
60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS
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55V, N-Ch, 6.6 mΩ max, Automotive MOSFET, TO-220, OptiMOS™, PG-TO220-3, RoHS
STMicroelectronicsSTP130N6F7
N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in TO-220 package
설명
유통업체에서 제공한 Infineon IRFB7545PBF에 대한 설명입니다.
MOSFET Transistor N-Channel 60 V 95A (Tc) 125W (Tc) Through Hole TO-220
60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS
Infineon SCT
Single N-Channel 60 V 5.9 mOhm 75 nC HEXFET® Power Mosfet - TO-220-3
Trans MOSFET N-CH 60V 95A 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 95A I(D), 60V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mosfet, N Channel, 60V, 95A, To-220Ab-3; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:95A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.7V; Msl:-Rohs Compliant: Yes |Infineon Technologies IRFB7545PBF.
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)95 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance5.9 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time43 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.01 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation125 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance5.9 mΩ
Package Quantity1000
Power Dissipation125 W
Rds On Max5.9 mΩ
Rise Time72 ns
Schedule B8541290080
Threshold Voltage3.7 V
Turn-Off Delay Time44 ns
Turn-On Delay Time12 ns
Dimensions
Height19.8 mm
Length10.67 mm
Width4.83 mm