This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
MOSFET, P, SMD, SUPERSOT-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):52mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-800mV; Power Dissipation Pd:500mW; Transistor Case Style:SuperSOT; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:-2.4A; Package / Case:SuperSOT-3; Power Dissipation Pd:500mW; Termination Type:SMD; Voltage Vds Typ:-20V; Voltage Vgs Max:-800mV; Voltage Vgs Rds on Measurement:-4.5V
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -2.4 / Drain-Source Voltage (Vds) V = -20 / ON Resistance (Rds(on)) mOhm = 70 / Gate-Source Voltage V = 8 / Fall Time ns = 25 / Rise Time ns = 15 / Turn-OFF Delay Time ns = 40 / Turn-ON Delay Time ns = 15 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500