onsemi FDMS9620S

Dual N-Channel 30 V 32 mOhm Surface Mount PowerTrench Mosfet - Power 56

Trans MOSFET Array Dual N-CH 30V 7.5A/10A 8-Pin MLP EP T/R

Dual N-Channel PowerTrench® MOSFET 30V

MOSFET 30V Dual N-Ch PowerTrenchAr MOSFET

Power Field-Effect Transistor, 7.5A I(D), 30V, 0.0215ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Fet 30V 21.5 Mohm Mlp Rohs Compliant: Yes

MOSFET N-CHAN DUAL 30V POWER56

POWER FIELD-EFFECT TRANSISTOR, 7

2.5W 20V 3V@ 250µA 14nC@ 10V 2individualNChannel 30V 21.5mΩ@ 7.5A,10V 7.5A，10A 665pF@15V DFN SMD mount 6mm*5mm*800μm

This device includes two specialized MOSFETs in a unique dual Power 56 package. It is designed to provide an optimal Synchronous Buck power stage in terms of efficiency and PCB utilization. The low switching loss high-side MOSFET is complemented by a low conduction loss low-side SyncFET™.

MOSFET, DUAL, N, SMD, MLP; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:7.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):21.5mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:2.5W; Transistor Case Style:Power 56; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id N Channel 2:7.5A; Cont Current Id N Channel 3:10A; Current Id Max:10A; On State Resistance Channel 1:21.5mohm; On State Resistance N Channel 2:13mohm; Package / Case:Power 56; Power Dissipation Pd:2.5W; Pulse Current Idm:60A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.6V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V