MOSFET, N-CH, 60V, 108A, DUAL COOL 56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:108A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremelylow Junction-to-Ambient thermal resistance.