공급망
Lifecycle StatusObsolete (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
관련 부품
InfineonIPD350N06LGBTMA1
Trans MOSFET N-CH 60V 29A 3-Pin(2+Tab) DPAK T/R / OptiMOS® Power-Transistor
STMicroelectronicsSTD30NF06LT4
N-Channel 60V - 0.022Ohm - 35A - DPAK StripFET(TM) II POWER MOSFET
설명
유통업체에서 제공한 onsemi FDD5690에 대한 설명입니다.
N-Channel PowerTrench® MOSFET, 60V, 30A, 27mΩ
N-Channel 60 V 27 mOhm Surface Mount PowerTrench® Mosfet - DPAK-3
Power Field-Effect Transistor, 30A I(D), 60V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N, D-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:30A; Resistance, Rds On:0.027ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.5V; Case Style:DPAK; Termination ;RoHS Compliant: Yes
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-252
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)30 A
Current Rating30 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance27 mΩ
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.11 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs2.5 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation50 W
Rds On Max27 mΩ
Resistance27 MΩ
Rise Time9 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage2.5 V
Turn-Off Delay Time24 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)60 V
Dimensions
Height2.517 mm
Length6.73 mm
Width6.22 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책