공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-01-31
Lifecycle StatusObsolete (Last Updated: 9 months ago)
LTB Date2010-09-23
LTD Date2011-03-23
관련 부품
STMicroelectronicsSTD30NF06LT4
N-Channel 60V - 0.022Ohm - 35A - DPAK StripFET(TM) II POWER MOSFET
STMicroelectronicsSTD35NF06LT4
N-channel 60 V, 0.014 Ohm typ., 35 A StripFET II Power MOSFET in a DPAK package
InfineonIRFR2607ZPBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 17.6 Milliohms;ID 42A;D-Pak (TO-252AA);-55de
InfineonIPD053N06NATMA1
3kW 20V 2.8V(Typ) 27nC@10V 1 N-Ch 60V 5.3mΩ@10V 2nF@30V TO-252 SMD 6.5mm × 622cm × 2.51mm
InfineonIPD350N06LGBTMA1
MOSFET N-CH 60V 29A TO252-3 N-Channel 60 V 29A (Tc) 68W (Tc) Surface Mount PG-TO252-3
설명
유통업체에서 제공한 onsemi FDD5810에 대한 설명입니다.
TRANS MOSFET N-CH 60V 7.7A 3PIN DPAK
Power Field-Effect Transistor, 7.7A I(D), 60V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
72W(Tc) 20V 2V@ 250µA 34nC@ 10V 1individualNChannel 60V 22mΩ@ 32A,10V 35A 1.89nF@25V D-PAK，TO-252 SMD mount 6.73mm*6.22mm*2.39mm
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:7.4A; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):43mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:1.6V; Power Dissipation, Pd:72W ;RoHS Compliant: Yes
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-252
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)7.7 A
Current Rating35 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance27 mΩ
Drain to Source Voltage (Vds)60 V
Element ConfigurationSingle
Fall Time34 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.89 nF
Max Operating Temperature175 °C
Max Power Dissipation72 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
Power Dissipation88 W
Rds On Max22 mΩ
Rise Time75 ns
Turn-Off Delay Time26 ns
Voltage Rating (DC)60 V