공급망
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2015-05-15
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
InfineonIRFR6215TRRPBF
MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.295Ohm;ID -13A;D-Pak (TO-252AA);PD 110W
InfineonIRFR6215TRPBF
MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.295Ohm;ID -13A;D-Pak (TO-252AA);PD 110W
InfineonIRFR6215PBF
MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.295Ohm;ID -13A;D-Pak (TO-252AA);PD 110W
설명
유통업체에서 제공한 onsemi FDMC86262P에 대한 설명입니다.
P-Channel PowerTrench® MOSFET -150 V, -2 A, 307 mΩ
PT5 150V/25V Pch PowerTrench Mosfet - 8LD,MLP,DUAL, 3.3MM SQUARE
MOSFET, P-CH, -150V, -8.4A, 40W, POWER33; Transistor Polarity: P Channel; Continuous Drain Current Id: -8.4A; Drain Source Voltage Vds: -150V; On Resistance Rds(on): 0.241ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® technology. This very high density process is especially tailored to minimize on- state resistance and optimizad for superior switching performance.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight165.33333 mg
Technical
Continuous Drain Current (ID)8.4 A
Drain to Source Breakdown Voltage-150 V
Drain to Source Resistance307 mΩ
Drain to Source Voltage (Vdss)-150 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)25 V
Input Capacitance885 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation40 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation2.3 W
Rds On Max307 mΩ
Schedule B8541290080
Turn-Off Delay Time15 ns
Turn-On Delay Time8.5 ns
Dimensions
Height800 µm