Infineon IRFR6215TRPBF

MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.295Ohm;ID -13A;D-Pak (TO-252AA);PD 110W

Single P-Channel 150 V 0.58 Ohm 66 nC HEXFET® Power Mosfet - TO-252AA

IRFR6215TRPBF,MOSFET, P-CHANNE L, -150V, 13A, 580 MOHM, 44 N

-150V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Power MOSFET, P Channel, 150 V, 13 A, 0.295 ohm, TO-252AA, Surface Mount

Power Field-Effect Transistor, 13A I(D), 150V, 0.295ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

MOSFET,P CH,150V,13A,DPAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-13A; Drain Source Voltage Vds:-150V; On Resistance Rds(on):295mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252AA; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-13A; Power Dissipation Pd:110W; Voltage Vgs Max:-20V

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.