MOSFET, P-CH, -150V, -2.2A, SOIC-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.2A; Drain Source Voltage Vds:-150V; On Resistance Rds(on):0.191ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-
This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates shielded gate technology. The process has been optimized for the on-state resistance and yet maintain superior switching performance.