공급망
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-07-25
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
InfineonIRF7451TRPBF
Power MOSFET(Vdss=150V, Rds(on)max=0.09ohm, Id=3.6A) | MOSFET N-CH 150V 3.6A 8-SOIC
InfineonIRFL4315TRPBF
Trans MOSFET N-CH 150V 2.6A Automotive 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 150V 2.6A SOT223
InfineonIRFL4315PBF
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 185 Milliohms;ID 2.6A;SOT-223;PD 2.8W;-55de
설명
유통업체에서 제공한 onsemi FDMC2523P에 대한 설명입니다.
P-Channel QFET® MOSFET -150V, -3A, 1.5Ω
FDMC2523P Series -150 V -3 A 1.5 Ohm Surface Mount P-Channel QFET - MLP-8
FDMC2523P P-Channel MOSFET, 1.8 A, 150 V QFET, 8-Pin MLP ON Semiconductor
These P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight210 mg
Technical
Continuous Drain Current (ID)3 A
Current Rating-3 A
Drain to Source Breakdown Voltage-150 V
Drain to Source Resistance1.5 Ω
Drain to Source Voltage (Vdss)-150 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance270 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation42 W
Rds On Max1.5 Ω
Resistance1.5 Ω
Rise Time11 ns
Schedule B8541290080
Threshold Voltage3.8 V
Turn-Off Delay Time19 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)-150 V
Dimensions
Height800 µm
Length3 mm
Width3 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책