Infineon IRFL4315TRPBF

Trans MOSFET N-CH 150V 2.6A Automotive 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 150V 2.6A SOT223

150V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS

Power MOSFET, N Channel, 150 V, 2.6 A, 0.185 ohm, SOT-223, Surface Mount

Power Field-Effect Transistor, 2.6A I(D), 150V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

MOSFET, N-CH, 150V, 2.6A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.185ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; P

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2.6 / Drain-Source Voltage (Vds) V = 150 / ON Resistance (Rds(on)) mOhm = 185 / Gate-Source Voltage V = 30 / Fall Time ns = 19 / Rise Time ns = 21 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 8.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 2.8