관련 부품
STMicroelectronicsSTD2NK90Z-1
N-CHANNEL 900V - 5.5 Ohm - 2.1A - DPAK ZENER-PROTECTED SUPERMESH MOSFET
STMicroelectronicsSTD3NK80Z-1
N-CHANNEL 800V - 3.8 Ohm - 2.5A IPAK Zener-Protected SuperMESH™ Power MOSFET
설명
유통업체에서 제공한 STMicroelectronics STD4N52K3에 대한 설명입니다.
N-channel 525 V, 2.5 A, 2.1 Ohm typ., SuperMESH3(TM) Power MOSFET in DPAK package
N-Channel 525 V 2.6 Ohm Surface Mount SuperMesh III Power MosFet - TO-252
Trans MOSFET N-CH 525V 2.5A 3-Pin(3+Tab) IPAK Tube
45W(Tc) 30V 4.5V@ 50¦ÌA 2nC@ 10 V 1N 525V 2.6¦¸@ 1.25A,10V 2.5A 334pF@100V TO-252-3
Hv Mosfet Mdmesh |Stmicroelectronics STD4N52K3
Power MOSFETs, 525V, 2.5A, DPAK, Tape and Reel
STMicroelectronics SCT
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-251-3
MountSurface Mount, Through Hole
Number of Pins8
Number of Terminals3
Technical
Continuous Drain Current (ID)2.5 A
Drain to Source Breakdown Voltage525 V
Drain to Source Resistance2.6 Ω
Drain to Source Voltage (Vdss)525 V
Element ConfigurationSingle
Fall Time14 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.783 nF
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Breakdown Voltage525 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation70 W
Rds On Max2.6 Ω
Resistance2.6 Ω
Rise Time7 ns
Turn-Off Delay Time21 ns
Turn-On Delay Time8 ns