가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | FDMA1028NZ | 27,000 | 3K | Tape & Reel | ||||||||
| Newark | FDMA1028NZ | 1,002 | 1 | Cut Tape | ||||||||
| Verical | FDMA1028NZ | 1,825 | 30 | |||||||||
| Arrow Electronics | FDMA1028NZ | 2,886 | 1 | |||||||||
| Rochester Electronics | FDMA1028NZ | 531,345 | 23h |
공급망
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-05-26
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
onsemiFDMA1032CZ
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 3.7 A, 3.7 A, 0.037 ohm
Diodes Inc.ZXMN2F34FHTA
Power MOSFET, Low Voltage, N Channel, 20 V, 4 A, 0.06 ohm, SOT-23, Surface Mount
onsemiFDME1034CZT
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 3.8 A, 3.8 A, 0.055 ohm
설명
유통업체에서 제공한 onsemi FDMA1028NZ에 대한 설명입니다.
PowerTrench® MOSFET, Dual N-Channel, 20V, 3.7A, 68mΩ
Transistor MOSFET Array Dual N-CH 20V 3.7A 6-Pin MicroFET T/R
Avnet Japan
Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229VCCC
This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
MOSFET, DUAL, N, MLP6; Transistor Polarity:N Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:20V; On Resistance Rds(on):68mohm; Rds(on) Test Voltage Vgs:1V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:1.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:3.7A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:MLP-6; Power Dissipation Pd:1.4W; Power Dissipation Pd:1.4W; Pulse Current Idm:6A; SMD Marking:028; Termination Type:SMD; Voltage Vds:20V; Voltage Vds Typ:20V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:1.5V
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
MountSurface Mount
Number of Terminals6
Weight40 mg
Technical
Continuous Drain Current (ID)3.7 A
Current Rating3.7 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance68 mΩ
Drain to Source Voltage (Vdss)20 V
Dual Supply Voltage20 V
Element ConfigurationDual
Fall Time8 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance340 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.4 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation700 mW
Rds On Max68 mΩ
Resistance68 MΩ
Rise Time8 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage1 V
Turn-Off Delay Time14 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)20 V
Dimensions
Height800 µm
Length2 mm
Width2 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책