This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
MOSFET, DUAL, N, MLP6; Transistor Polarity:N Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:20V; On Resistance Rds(on):68mohm; Rds(on) Test Voltage Vgs:1V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:1.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:3.7A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:MLP-6; Power Dissipation Pd:1.4W; Power Dissipation Pd:1.4W; Pulse Current Idm:6A; SMD Marking:028; Termination Type:SMD; Voltage Vds:20V; Voltage Vds Typ:20V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:1.5V