onsemi FDFMA2N028Z

Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 20V, 3.7A, 68mΩ
$ 0.262
Obsolete
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DistributorSKUMinPkg
Rochester Electronics
2
FDFMA2N028Z33,000
13m
Win SourceWS-FDFMA2N028Z3,000660
1h
Worldway ElectronicsFDFMA2N028Z25,3387Tape & Reel
23h
Fmall Co., LimitedFDFMA2N028Z36,220
4d
AnlinkdaFDFMA2N028Z37,026
2d

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IHS

Datasheet0 페이지0년 전
Datasheet0 페이지0년 전

Fairchild Semiconductor

onsemi

Farnell

DigiKey

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공급망

Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-01-04
Lifecycle StatusObsolete (Last Updated: 5 days ago)
LTB Date2021-10-08
LTD Date2022-04-08
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)

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설명

유통업체에서 제공한 onsemi FDFMA2N028Z에 대한 설명입니다.

Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 20V, 3.7A, 68mΩ
onsemi
20V,3.7A,68 OHM, NCH POWER TRENCH MOSFET & SCHOTTKY DIODE
Future Electronics
Trans MOSFET N-CH 20V 3.7A 6-Pin MicroFET EP T/R
Verical
Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IHS
MOSFET, N-CH, 20V, 3.7A, UFET-6
element14 APAC
20V 3.7A 68 O Nch Er Tre Rohs Compliant: Yes
Newark
MOSFET 20V N-Ch PT MFET SCHOTTKY
Fly-Wing Technology
MOSFET N-CH 20V 3.7A 6MICROFET
DigiKey
MOSFETs 20V N-Ch PT MFET_SCHOTTKY
Mouser
SMALL SIGNAL FIELD-EFFECT TRANSI
DigiKey Marketplace
This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra–portable applications. It features a MOSFET with low on–state resistance, and an independently connected schottky diode with low forward voltage. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
Fairchild Semiconductor

이미지

Farnell
Augswan
Future Electronics
Rochester Electronics
LZChips

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