공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2006-11-07
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
onsemiFDD4141-F085
FDD4141-F085 P-Channel MOSFET, 50 A, 40 V PowerTrench, 3-Pin DPAK ON Semiconductor
STMicroelectronicsSTD30NF03LT4
N-channel 30 V, 0.02 Ohm typ., 30 A StripFET(TM) II PowerMOSFET in a DPAK package
InfineonIPD040N03LGATMA1
N-Channel 30 V 90 A 4 mOhm Surface Mount OptiMOS Power-Transistor - PG-TO252-3
설명
유통업체에서 제공한 onsemi FDD4685에 대한 설명입니다.
ON SEMICONDUCTOR - FDD4685 - MOSFET Transistor, P Channel, 8.4 mA, -40 V, 0.023 ohm, 10 V, 1.6 V
P-Channel PowerTrench® MOSFET, -40V, -23A, 27mΩ
Single P-Channel 40 V 69 W 27 nC Silicon Surface Mount Mosfet - TO-252-3
Power Field-Effect Transistor, 8.4A I(D), 40V, 0.042ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
This P-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench® technology to deliver low rDS(on) and good switching characteristic offering superior performance in application.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)8.4 A
Current Rating-8.4 A
Drain to Source Breakdown Voltage-40 V
Drain to Source Resistance42 mΩ
Drain to Source Voltage (Vdss)-40 V
Dual Supply Voltage-40 V
Element ConfigurationSingle
Fall Time14 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.38 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation69 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs-1.6 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation69 W
Rds On Max27 mΩ
Resistance27 MΩ
Rise Time15 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-1.6 V
Turn-Off Delay Time34 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)-40 V
Dimensions
Height2.517 mm
Length6.73 mm
Width6.22 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책