공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-03-11
Lifecycle StatusObsolete (Last Updated: 6 months ago)
관련 부품
InfineonIRF2903ZSTRLP
Trans MOSFET N-CH Si 30V 260A Automotive 3-Pin(2+Tab) D2PAK T/R / HEXFET Power MOSFET
설명
유통업체에서 제공한 onsemi FDB6670AS에 대한 설명입니다.
Trans MOSFET N-CH 30V 62A 3-Pin(2+Tab) D2PAK T/R
62.5W(Tc) 3V@1mA 39nC@ 15V 1N 30V 8.5m¦¸@ 31A,10V 1.57pF@15V TO-263AB
Power Field-Effect Transistor, 62A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
30V,NCH, SINGLE,TO263, POWER TRENCH SYNCFET<AZ
MOSFETs 30V N-Channel PT SyncFET
30V N-Channel PowerTrench SyncFET
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)62 A
Current Rating31 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance8.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.57 nF
Max Operating Temperature150 °C
Max Power Dissipation62.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation62.5 W
Rds On Max8.5 mΩ
Rise Time16 ns
Turn-Off Delay Time25 ns
Voltage Rating (DC)30 V