공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-06-30
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
InfineonIPB80N03S4L02ATMA1
30V, N-Ch, 2.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
설명
유통업체에서 제공한 Infineon IRF2903ZSTRLP에 대한 설명입니다.
Trans MOSFET N-CH Si 30V 260A Automotive 3-Pin(2+Tab) D2PAK T/R / HEXFET Power MOSFET
Single N-Channel 30 V 2.4 mOhm 240 nC HEXFET® Power Mosfet - D2PAK
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
Power Field-Effect Transistor, 75A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
N CH MOSFET, HEXFET AUTOMOTIVE, 30V 75A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: Yes
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
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- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance2.4 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time37 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.32 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation290 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance2.4 mΩ
Package Quantity800
Power Dissipation290 W
Rds On Max2.4 mΩ
Resistance2.4 MΩ
Rise Time100 ns
Turn-Off Delay Time48 ns
Turn-On Delay Time24 ns