공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-05-31
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2009-12-11
LTD Date2010-06-11
관련 부품
InfineonIRF2903ZSTRLP
Trans MOSFET N-CH Si 30V 260A Automotive 3-Pin(2+Tab) D2PAK T/R / HEXFET Power MOSFET
InfineonIPB80N03S4L02ATMA1
30V, N-Ch, 2.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
설명
유통업체에서 제공한 onsemi ISL9N302AS3ST에 대한 설명입니다.
MOSFET N-CH 30V 75A D2PAK
Trans MOSFET N-CH 30V 75A 3-Pin(2+Tab) TO-263AB T/R
TO-263AB,SINGLE,NCH,30V,0.0023 OHM LOGIC LEVEL DENSE TRENCH
Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N, SMD, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipa
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- ON Semiconductor
- ONS
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- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Current Rating75 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance3.3 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time34 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance11 nF
Max Operating Temperature175 °C
Max Power Dissipation345 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation345 W
Rds On Max2.3 mΩ
Rise Time120 ns
Turn-Off Delay Time45 ns
Voltage Rating (DC)30 V