Infineon IRFS38N20DPBF

Transistor MOSFET Negative Channel 200 Volt 38A 3-Pin(2+Tab) D2PAK

MOSFET Transistor, N Channel, 44 A, 200 V, 54 mohm, 10 V, 5 V

MOSFET N-CH 200V 43A D2PAK "N-Channel 200 V 43A (Tc) 3.8W (Ta), 300W (Tc) Surface Mount D2PAK"

MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.054Ohm;ID 43A;D2Pak;PD 300W;VGS +/-30V

Single N-Channel 200 V 0.054 Ohm 60 nC HEXFET® Power Mosfet - D2PAK

200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

N CHANNEL MOSFET, 200V, 44A, D2-PAK; Tra; Transistor Polarity:N Channel; Continuous Drain Current Id:44A;

Power Field-Effect Transistor, 43A I(D), 200V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

MOSFET, N, 200V, 44A, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:44A; Resistance, Rds On:0.054ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:D2-PAK; Current, Idm Pulse:180A; Power Dissipation:320W; Power, Pd:320W; Resistance, Rds on @ Vgs = 10V:0.054ohm; Thermal Resistance, Junction to Case A:0.47°C/W; Voltage, Vds:200V; Voltage, Vds Max:200V; Voltage, Vgs th Max:5V