공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2015-03-27
Lifecycle StatusObsolete (Last Updated: 4 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)
관련 부품
STMicroelectronicsSTU3LN62K3
N-channel 620 V, 2.5 Ω , 2.5 A SuperMESH3™ Power MOSFET DPAK, TO-220FP, TO-220, IPAK
STMicroelectronicsSTD3NK80Z-1
N-CHANNEL 800V - 3.8 Ohm - 2.5A IPAK Zener-Protected SuperMESH™ Power MOSFET
설명
유통업체에서 제공한 onsemi FCU3400N80Z에 대한 설명입니다.
N-Channel Power MOSFET, SUPERFET® II, 800 V, 2 A, 3.4 Ω, IPAK
SuperFET2 800V 3400 mOhm Zener embedded, IPAK PKG - TO-251 (I-PAK) MOLDED, 3 LEAD OPTION AA
Trans MOSFET N-CH 800V 2A 3-Pin(3+Tab) IPAK Tube
32W(Tc) 20V 4.5V@ 200¦ÌA 9.6nC@ 10 V 1N 800V 3.4¦¸@ 1A,10V 2A 400pF@100V TO-251 6.8mm*2.5mm*6.3mm
RAIL / S FET2 800V 3400 O Z , IPAK PKG
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Terminals3
Weight343.08 mg
Technical
Continuous Drain Current (ID)2 A
Drain to Source Resistance3.4 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Input Capacitance400 pF
Max Operating Temperature150 °C
Max Power Dissipation32 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max3.4 Ω
Schedule B8541290080