공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-05-15
Lifecycle StatusProduction (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 days ago)
관련 부품
InfineonIPAW60R190CEXKSA1
In a Tube of 450, N-Channel MOSFET, 26.7 A, 600 V, 3 + Tab-Pin TO-220FP Infineon IPAW60R190CEXKSA1
InfineonSPA20N60C3XKSA1
TRANSISTOR, MOSFET, N-CHANNEL, 650V, 20.7A, 0.19 OHM, TO-220FP, COOLMOS POWER
설명
유통업체에서 제공한 onsemi FCPF220N80에 대한 설명입니다.
N-Channel Power MOSFET, SUPERFET® II, 800 V, 23 A, 220 mΩ, TO-220F
MOSFET N-CH 800V 23A TO220 / Trans MOSFET N-CH 800V 23A 3-Pin(3+Tab) TO-220FP Tube
MOSFET 800V 23A 220mΩ@11.5A,10V 4.5V@2.3mA 105nC@10V 44W(Tc) 1 N-Ch TH TO-220F-3 10.36mm × 4.9mm × 16.07mm
SuperFET2 800V 220mOhm, max die of TO220F PKG - TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)23 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance220 mΩ
Drain to Source Voltage (Vds)800 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.56 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation44 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation44 W
Rds On Max220 mΩ
Schedule B8541290080
Turn-Off Delay Time75 ns
Turn-On Delay Time27 ns
Dimensions
Height19.5 mm