공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2014-04-15
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
VishaySIHP23N60E-GE3
227W(Tc) 30V 4V@ 250¦ÌA 95nC@ 10V 1N 600V 158m¦¸@ 12A,10V 23A 2.418nF@100V TO-220 9.01mm
설명
유통업체에서 제공한 onsemi FCP190N65F에 대한 설명입니다.
N-Channel Power MOSFET, SUPERFET® II, FRFET®, 650V, 20.6A, 190mΩ, TO-220
SuperFET2 650V, 190 mOhm, FRFET - TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
Trans MOSFET N-CH 650V 20.6A 3-Pin(3+Tab) TO-220 Rail
208W(Tc) 20V 5V@2mA 78nC@ 10V 1N 650V 190m¦¸@ 10A,10V 20.6A 3.225nF@25V TO-220-3 9.4mm
Power Field-Effect Transistor, 20.6A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizingcharge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)20.6 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance190 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time4.2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.225 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation208 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation208 W
Rds On Max190 mΩ
Rise Time11 ns
Schedule B8541290080
Turn-Off Delay Time62 ns
Turn-On Delay Time25 ns
Dimensions
Height20.4 mm
Length10.67 mm
Width4.7 mm