onsemi FCPF20N60T

Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, TO-220F

Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220FP Rail

Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N, TO-220F; Transistor type:MOSFET; Voltage, Vds typ:600V; Current, Id cont:20A; Resistance, Rds on:0.19ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:5V; Case style:TO-220F; Current, Idm pulse:60A; Energy, avalanche repetitive Ear:20.8mJ; Pin configuration:1(G), 2(D), 3(S); Power, Pd:39W; Termination Type:Through Hole; Transistor polarity:N; Voltage, Rds measurement:10V; Voltage, Vds max:600V; Voltage, Vgs max:5V

SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.