onsemi DTC143EET1G

Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 4.7 kohm, 4.7 kohm

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

NPN Bipolar Digital Transistor (BRT)

SS SC75 50V 100mA 200mW Pre-Biased Bipolar Transistor SOT-416

Trans Digital BJT NPN 50V 0.1A 300mW 3-Pin SOT-416 T/R

Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN

TRANS, NPN, 4.7K/4.7K, SC-75-3; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: 4.7kohm; Resistor Ratio, R1 / R2: 1(Ratio); RF Transistor Case: SC-75; No. of Pins: 3 Pin; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-75/SOT-416 package which is designed for low power surface mount applications.