onsemi DTC114YET1G

Bipolar Transistors (BJT); DTC114YET1G; ON SEMICONDUCTOR; NPN; 3; 50 V; 100 mA

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

NPN Bipolar Digital Transistor (BRT)

DTC114YET1G NPN DIGITAL TRANSISTOR,100 MA 50V 10 KOHMS, RATIO OF 0.21,3-PIN SC-75

Trans Digital BJT NPN 50V 100mA 300mW 3-Pin SOT-416 T/R

DTC Series Surface Mount NPN Digital Transistor - SC-75

NPN - Pre-Biased 200mW 100mA 50V SC-75(SOT-523) Digital Transistors ROHS

BRT TRANSISTOR, 50V, 47K/10KOHM, SC75; C; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 47k

Brt Transistor, 50V, 47K/10Kohm, Sc75; Transistor, Polaridad:Npn; Tensión Colector Emisor V(Br)Ceo:50V; Núm. De Contactos:3; Nivel De Sensibilidad A La Humedad (Msl):Msl 1 - Unlimited; Continuous Collector Current Max:100Ma |Onsemi DTC114YET1G

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-75/SOT-416 package which is designed for low power surface mount applications.