대체 부품
Price @ 1000
$ 0.15
$ 0.073
$ 0.073
Stock
3,553,416
54,851,797
54,851,797
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SC
SOT-363
SOT-363
Drain to Source Voltage (Vdss)
60 V
60 V
60 V
Continuous Drain Current (ID)
115 mA
115 mA
115 mA
Threshold Voltage
1.76 V
2 V
2 V
Rds On Max
7.5 Ω
7.5 Ω
7.5 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
200 mW
310 mW
310 mW
Input Capacitance
50 pF
50 pF
50 pF
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2007-10-08
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
VishaySI1926DL-T1-E3
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MOSFET P-CH 250V 140MA SC59 / P-Channel 250 V 140mA (Ta) 500mW (Tc) Surface Mount PG-SC59-3
설명
유통업체에서 제공한 onsemi 2N7002DW에 대한 설명입니다.
N-Channel MOSFET, Enhancement Mode, 60V, 0.115A, 2Ω
Transistor MOSFET Array Dual N-CH 60V 0.115A 6-Pin SOT-363 T/R
Avnet Japan
N-Channel 60 V 7.5 Ohm SMT Enhancement Mode Field Effect Transistor - SOT-363
MOSFET, DUAL N CH, 60V, 115MA, SOT-363;; MOSFET, DUAL N CH, 60V, 115MA, SOT-363; Transistor Polarity:N Channel; Continuous Drain Current Id:115mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.6ohm; Rds(on) Test
N-Channel Enhancement Mode Field Effect Transistor Product Highlights: Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant
Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) mA = 115 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 7.5 / Gate-Source Voltage V = 20 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-363 / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 200
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSC
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight28 mg
Technical
Continuous Drain Current (ID)115 mA
Drain to Source Breakdown Voltage78 V
Drain to Source Resistance2 Ω
Drain to Source Voltage (Vdss)60 V
Element ConfigurationDual
Gate to Source Voltage (Vgs)20 V
Input Capacitance50 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs1.76 V
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation200 mW
Rds On Max7.5 Ω
Resistance7.5 Ω
Schedule B8541210080
Threshold Voltage1.76 V
Turn-Off Delay Time12.5 ns
Turn-On Delay Time5.85 ns
Dimensions
Height1.1 mm
Length2 mm
Width1.25 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책