공급망
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)
관련 부품
InfineonIRLML6402TRPBF
MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.065Ohm;ID -3.7A;Micro3;PD 1.3W;VGS +/-12V
InfineonIRLML6402GTRPBF
Single P-Channel 20 V 1.3 W 8.0 nC Hexfet Power Mosfet Surface Mount - SOT-23
설명
유통업체에서 제공한 Nexperia PMV28UNEAR에 대한 설명입니다.
Small Signal low RDSon automotiveTrans MOSFET N-CH 20V 4.7A 3-Pin SOT-23 T/R
Avnet Japan
Trans MOSFET N-CH 20V 4.7A Automotive AEC-Q101 3-Pin SOT-23 T/R
N-Channel 20V 4.7A (Ta) 510mW (Ta), 3.9W (Tc) Surface Mount TO-236AB (SOT23)
Power MOSFET, N Channel, 20 V, 4.7 A, 0.024 ohm, TO-236AB, Surface Mount
Nexperia N-Ch MOSFET, Vds=20V, 4.7A, SOT-23, SMD, 3-Pin
MOSFET, N- CH, 20V, 4.7A, TO-236AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.7A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.024ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 700mV; Power Dissipation Pd: 510mW; Transistor Case Style: TO-236AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
제조업체 별칭
Nexperia에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Nexperia는 다음 이름으로도 알려져 있습니다:
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- Infineon_Nexperia
- NEXPERIA (FORMERLY NXP) (4001801)
기술 사양
Physical
Case/PackageTO-236-3
Contact PlatingTin
MountSurface Mount
Number of Terminals3
Technical
Ambient Temperature Range High150 °C
Continuous Drain Current (ID)2.9 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance32 mΩ
Drain to Source Voltage (Vds)20 V
Gate to Source Voltage (Vgs)8 V
Input Capacitance490 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3.9 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation510 mW
Rds On Max32 mΩ
Schedule B8541290080
Turn-Off Delay Time39 ns
Turn-On Delay Time8 ns
Dimensions
Height1.1 mm