공급망
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
InfineonIRLML6402TRPBF
Transistor: P-MOSFET; unipolar; -20V; -2.3A; 0.065ohm; 1.3W; -55+150 deg.C; SMD; SOT23
설명
유통업체에서 제공한 onsemi NTR3C21NZT1G에 대한 설명입니다.
Single N-Channel Power MOSFET 20V, 3.6A, 24mΩ
NTR Series 20 V 24 mOhm 0.47 W Surface Mount N-Channel Power Mosfet - SOT-23
Single N-Channel Power Mosfet 20V, 3.6A, 24M/Reel |Onsemi NTR3C21NZT1G
Small Signal Field-Effect Transistor, 3.6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, N-CH, 20V, 3.6A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:3.6A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Pow
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 3.6 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 55 / Gate-Source Voltage V = 8 / Fall Time us = 4.67 / Rise Time ns = 14 / Turn-OFF Delay Time ns = 420 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 470
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기술 사양
Physical
Case/PackageTO-236-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)3.6 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance24 mΩ
Drain to Source Voltage (Vdss)20 V
Fall Time4.67 µs
Gate to Source Voltage (Vgs)8 V
Input Capacitance1.54 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation470 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation470 mW
Rds On Max24 mΩ
Rise Time14 ns
Schedule B8541290080
Turn-Off Delay Time420 ns
Turn-On Delay Time7 ns
Dimensions
Height1.11 mm