가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TME | IXTQ120N20P | 2 | 1 | 8h | ||||||||
| DigiKey | IXTQ120N20P-ND | 1 | 1 | Tube | ||||||||
| TTI | IXTQ120N20P | 0 | 300 | Tube | 21h | |||||||
| Newark | IXTQ120N20P | 0 | 1 | |||||||||
| Onlinecomponents.com | IXTQ120N20P | 0 | 75 | Bulk |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-09-28
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonIRFP90N20DPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.023Ohm;ID 94A;TO-247AC;PD 580W;VGS +/-30V
InfineonIRFBA90N20DPBF
200V Single N-Channel HEXFET Power MOSFET in a Super 220 (TO-273AA) package, SUPER220-3, RoHS
onsemiFDP075N15A-F102
N-Channel 150 V 7.5 mOhm 77 nC Surface Mount PowerTrench Mosfet - TO-220-3
설명
유통업체에서 제공한 Littelfuse IXTQ120N20P에 대한 설명입니다.
N-Channel 200 V 22 mOhm Enhancement Mode PolarHT Mosfet - TO-3P
Disc Mosfet N-Ch Std-Polar To-3P (3)/Tube |Littelfuse IXTQ120N20P
Trans MOSFET N-CH 200V 120A 3-Pin(3+Tab) TO-3P
Polar™ Series - 100V - 1200V N-Channel Standard Power MOSFETs, TO-3P, RoHS
Littelfuse SCT
Power Field-Effect Transistor, 120A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
714W(Tc) 20V 5V@ 250¦ÌA 152nC@ 10 V 1N 200V 22m¦¸@ 500mA,10V 120A 6nF@25V TO-3P 15.8mm*4.9mm*20.3mm
场效应管, MOSFET, N沟道, 200V, 120A, TO-3P;
MOSFET 120 Amps 200V 0.022 Rds
MOSFET, N-CH, 200V, 120A, TO-3P;
제조업체 별칭
Littelfuse에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Littelfuse는 다음 이름으로도 알려져 있습니다:
- LITTLEFUSE
- Littelfuse Inc
- LITTELFU
- LITTEL
- LITTELFUS
- LIT
- LITTELF
- LITTLE
- LITT
- LITTLEFUSE INC
- LTF
- LTL
- LFUSE
- LIF
- L/F
- LITTLEFUS
- LITTLEFU
- LITTEIFUSE
- Littelfuse/Commercial Vehicle Products
- LTFUSE
- LITTELFUSE FAR EAST PTE LTD
- Hartland Controls / Littelfuse
- LITL
- Littelfuse - Raychem
- LITTELFUSE/WICKMANN
기술 사양
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance22 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time31 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6 nF
Max Operating Temperature175 °C
Max Power Dissipation714 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation714 W
Rds On Max22 mΩ
Reverse Recovery Time180 ns
Rise Time35 ns
Turn-Off Delay Time100 ns